
SiE830DF
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
8 0
20
V GS = 10 V thru 3 V
16
60
12
40
8
T C = 125 °C
20
4
0
V GS = 2 V
0
T C = 25 °C
T C = - 55 °C
0.0
0.5
1.0
1.5
2.0
1.0
1.4
1. 8
2.2
2.6
3.0
0.0044
V DS - Drain-to-So u rce V oltage ( V )
Output Characteristics
7200
V GS - Gate-to-So u rce V oltage ( V )
Transfer Characteristics
0.0042
0.0040
V GS = 4.5 V
6000
C iss
4 8 00
0.003 8
3600
0.0036
0.0034
V GS = 10 V
2400
C oss
0.0032
0.0030
1200
0
C rss
0
20
40
60
8 0
0
5
10
15
20
25
30
10
I D - Drain C u rrent (A)
On-Resistance vs. Drain Current
I D = 20 A
1. 8
V DS - Drain-to-So u rce V oltage ( V )
Capacitance
I D = 16 A
8
V DS = 15 V
1.6
V DS = 32 V
1.4
V GS = 4.5 V, 10 V
6
1.2
4
1.0
2
0
0. 8
0.6
0
20
40
60
8 0
- 50
- 25
0
25
50
75
100
125
150
Q g - Total Gate Charge (nC)
Gate Charge
Document Number: 74422
S09-1337-Rev. D, 13-Jul-09
T J - J u nction Temperat u re (°C)
On-Resistance vs. Junction Temperature
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